drd 960 g 34 rectifier diode ds 6008 C 1 march 2011 (ln28195 ) 1 / 6 www.dynexsemi.com features ? double side cooling ? high surge capability voltage ratings part and ordering number repetitive peak voltages v rrm v conditions drd 96 0 g 34 drd 960 g 32 drd 960 g 30 drd 960 g 28 drd960g26 DRD960G24 34 00 32 00 30 00 28 00 2600 2400 v rsm = v rrm +100v ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: d rd 960 g 34 for a 34 00v device key parameters v rrm 3400 v i f(av) 960 a i fsm 12000 a (see package details for further information) fig. 1 package outline
drd 960 g 34 2 / 6 www.dynexsemi.com current ratings t case = 75c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 1150 a i f(rms) rms value - 1810 a i f continuous (direct) on - state current - 1630 a t case = 100c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 960 a i f(rms) rms value - 1510 a i f continuous (direct) on - state current - 1360 a surge ratings symbol parameter test conditions max. units i fsm surge (non - repetitive) on - state current 10ms half sine, t case = 175 c 12.0 ka i 2 t i 2 t for fusing v r = 0 0.72 ma 2 s
- 3 - d rd 960 g 34 3 / 6 www.dynexsemi.com thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.035 c/w r th(c - h) thermal resistance C case to heatsink double side cooled dc - 0.008 c/w t vj virtual junction temperature blocking v drm / vrrm - 40 175 c t stg storage temperature range - 40 175 c f m clamping force 12 18 kn characteristics symbol parameter test conditions min. max. units v fm forward voltage at 1500 a peak, t case = 25 c - 1.70 v i rm peak reverse current at v drm, t case = 1 75 c - 60 ma q s total stored charge i f = 1 000a, di rr /dt = 10 a/s - 3000 c t case = 175 c, v r =100v v to threshold voltage at t vj = 175 c - 0.88 v r t slope resistance at t vj = 1 75 c - 0.45 m ?
drd 960 g 34 4 / 6 www.dynexsemi.com curves fig.2 maximum forward characteristics fig.3 dissipation curves fig. 4 surge (non - repetitive) forward current vs time fig. 5 maximum (limit) transient thermal impedance - junction to case 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 0.5 1.5 2.5 3.5 4.5 instantaneous forward current, i f - (a) instantaneous forward voltage,v f - (v) t j =175 c 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 mean power dissipation - (w) mean on - state current, i t(av) - (a) 1/2 wave 3 phase 6 phase 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 1 10 100 surge current, itsm - (ka) number of cycles conditons: t case =175 c v r =0 pulse width = 10ms 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.001 0.01 0.1 1 10 100 thermal impedance zth(j - c) ( c/w ) time ( s ) double side cooled
- 5 - d rd 960 g 34 5 / 6 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. package outline type code: g note: some packages may be supplied with gate and or tags.
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